features low cost glass passivated junction u l t r a f a s t s w i tc h i n g f o r h i g h e f f i c i e n c y l o w r e v e r s e l e a k age c u rr ent low forward voltage drop high current capability mechani cal data c a s e : j e d e c r -- 1 , m o l d e d p l a s t i c polarity: color band denotes cathode w e i g h t : 0 . 0 07 o u n c e s , 0 . 20 g r a m s mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. un i t s maximum recurrent peak reverse voltage v r r m 1 00 2 00 4 00 6 0 0 800 v ma x i mu m rms v o l t a g e v r m s 70 14 0 28 0 42 0 560 v ma x i mu m dc b l o c ki n g v o l t a g e v dc 100 200 400 600 800 v maximum average f orw ard rectif ied current 9.5mm lead length, @t a = 7 5 peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @t j =125 maximum instantaneous f orw ard voltage @ 1 . 0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a = 1 5 0 m a x i m u m r e v e r s e r e c o v e ry t i m e ( n o t e 1 ) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja <d operating junction temperature range t j storage temperature range t stg 0.95 1 . 2 5 1.7 50 1 5 0 . 0 5 . 0 3 5 17 1 e 1 g 1e2g 1e3g 1E4G 1e5g 1e6g 35 50 1.0 3.thermal resistance junction to ambient a i r i fsm note: 1. measured with i f =0. 5a, i r =1a, i rr =0. 25a. 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. a - 55 - - - - - + 1 75 - 55 - - - - - + 1 75 30.0 1 e 1 g - - - 1 e6g a i f(av) u l t r a f a s t r e c t i f i e r s v o l t a g e r a n g e : 50 - - - 6 00 v curr e n t : 1 . 0 a r - 1 t h e p l a s t i c m a t e r i al c a r r i es u / l r e c og n i t i on 94 v -0 maxi mum rati ngs and electri cal characteri sti cs 50 www.diode.kr diode semiconductor korea
.6 .8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.1 1 10 100 tj=25 c pulse width=300 s 1% duty cycle o 1e1 g -1e 3g 1e 4g 1e 5g -1e 6g amperes amperes amperes junction capacitance,pf n o t es : 1 . r i se t i m e = 7 n s m a x . i n p u t i m p e d a n c e = 1 m .22pf. jjjjj 2.rise time =10ns max.source impedance=50 . instantaneous forward current 1 e1 g --- 1e 6g fig.1 -- test circuit diagram and reverse recovery time characteristic average forward current s e t t i me b a se f o r 10 n s / c m f i g .3 - - f o r w ar d d e r a t i n g c u r v e z fig.4 -- typical junction capacitance f i g .5 - - p e a k f o r w ar d s u r g e c u rr e n t a m b i e n t t e m p e r a t u r e , peak forward surge current number of cycles at 60hz r e v e r s e v o l t a g e , v o l t s 0 20 25 10 100 15 5 8.3ms single half sine-wave 50 5 10 20 30 0.5 1.0 0 2 5 5 0 7 5 1 0 0 1 2 5 1 50 single phase half wave 60h z resistive or inductive load 0.375"(95mm)lead length 0 175 pulse generator (note2) d.u.t. 1 nonin- ductive 50 n 1. 10 n1. oscilloscope (note 1) (+) 50vdc (approx) (-) (-) (-) t rr - 1 . 0 a - 0 . 25a 0 +0.5a 1cm instantaneous forward voltage, volts fig.2 -- typical forward characteristic 100 10 1 0 . 1 1 .0 4.0 10 10 0 t j = 25 f = 1 . 0 m h z v s i g = 50 m v p - p www.diode.kr diode semiconductor korea
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